Carbon doping effect on strain relaxation during Si...

Semiconductor Science and Technology 2007 / 01 Vol. 22; Iss. 1

Carbon doping effect on strain relaxation during Si 1− x − y Ge x C y epitaxial growth on Si(1 0 0) at 500 °C

Nitta, Hiroaki, Sakuraba, Masao, Murota, Junichi
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Volume:
22
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/22/1/s02
Date:
January, 2007
File:
PDF, 401 KB
english, 2007
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