Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2015 / 09 Vol. 33; Iss. 5
Resistive switching characteristics of integrated polycrystalline hafnium oxide based one transistor and one resistor devices fabricated by atomic vapor deposition methods
Kim, Hee-Dong, Crupi, Felice, Lukosius, Mindaugas, Trusch, Andreas, Walczyk, Christian, Wenger, ChristianVolume:
33
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4928412
Date:
September, 2015
File:
PDF, 1.47 MB
english, 2015