Intermediate Amorphous Layer Formation Mechanism at the...

Japanese Journal of Applied Physics 1993 / 4 Vol. 32; Iss. Part 1, No

Intermediate Amorphous Layer Formation Mechanism at the Interface of Epitaxial CeO 2 Layers and Si Substrates

Inoue, Tomoyasu, Ohsuna, Tetsu, Obara, Yasuhiro, Yamamoto, Yasuhiro, Satoh, Masataka, Sakurai, Yoshinobu
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Volume:
32
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.32.1765
Date:
April, 1993
File:
PDF, 1.17 MB
1993
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