Damage Depth Profiles in Ion-Implanted Silicon by the...

Japanese Journal of Applied Physics 1993 / 6 Vol. 32; Iss. Part 1, No

Damage Depth Profiles in Ion-Implanted Silicon by the Photoacoustic Displacement Technique

Hara, Tohru, Muraki, Takeshi, Sakurai, Masataka, Takeda, Satoru
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Volume:
32
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.32.2577
Date:
June, 1993
File:
PDF, 898 KB
1993
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