Single Crystalline Si Metal/Oxide/Semiconductor Field-Effect Transistors Using High-Quality Gate S i O 2 Deposited at 300° C by Remote Plasma Technique
Fuyuki, Takashi, Oka, Tohru, Matsunami, HiroyukiVolume:
33
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.33.440
Date:
January, 1994
File:
PDF, 578 KB
1994