Single Crystalline Si Metal/Oxide/Semiconductor...

Single Crystalline Si Metal/Oxide/Semiconductor Field-Effect Transistors Using High-Quality Gate S i O 2 Deposited at 300° C by Remote Plasma Technique

Fuyuki, Takashi, Oka, Tohru, Matsunami, Hiroyuki
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Volume:
33
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.33.440
Date:
January, 1994
File:
PDF, 578 KB
1994
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