Initial Stage of Hydrogen Etching of Si Surfaces...

Japanese Journal of Applied Physics 2000 / 12 Vol. 39; Iss. Part 1, No

Initial Stage of Hydrogen Etching of Si Surfaces Investigated by Infrared Reflection Absorption Spectroscopy

Noda, Hideyuki, Urisu, Tsuneo, Kobayashi, Yoshihiro, Ogino, Toshio
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Volume:
39
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.39.6985
Date:
December, 2000
File:
PDF, 253 KB
english, 2000
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