Oxidation Simulation of Heavily Phosphorus-Doped Silicon...

Japanese Journal of Applied Physics 2001 / 9 Vol. 40; Iss. Part 1, No

Oxidation Simulation of Heavily Phosphorus-Doped Silicon based on the Interfacial Silicon Emission Model

Uematsu, Masashi, Kageshima, Hiroyuki, Shiraishi, Kenji
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Volume:
40
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.40.5197
Date:
September, 2001
File:
PDF, 133 KB
english, 2001
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