Transient Capacitance in Metal-Oxide-Semiconductor Structures with Stacked Gate Dielectrics
Goto, Masakazu, Higuchi, Keiichi, Torii, Kazuyoshi, Hasunuma, Ryu, Yamabe, KikuoVolume:
43
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.43.7826
Date:
November, 2004
File:
PDF, 268 KB
english, 2004