Temperature Effects of Constant Bias Stress on n-Channel...

Japanese Journal of Applied Physics 2005 / 4 Vol. 44; Iss. 4B

Temperature Effects of Constant Bias Stress on n-Channel FETs with Hf-based Gate Dielectric

Choi, Rino, Lee, Byoung Hun, Young, Chadwin D., Sim, Jang Hoan, Bersuker, Gennadi
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Volume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.44.2201
Date:
April, 2005
File:
PDF, 229 KB
english, 2005
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