V ox / E...

Japanese Journal of Applied Physics 2007 / 1 Vol. 46; Iss. 1

V ox / E ox -Driven Breakdown of Ultrathin SiON Gate Dielectrics in p-Type Metal Oxide Semiconductor Field Effect Transistors under Low-Voltage Inversion Stress

Tsujikawa, Shimpei, Shiga, Katsuya, Umeda, Hiroshi, Yugami, Jiro
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Volume:
46
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.46.7
Date:
January, 2007
File:
PDF, 270 KB
english, 2007
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