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Mobility Degradation in (110)-Oriented Ultrathin-Body Double-Gate p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Silicon-on-Insulator Thickness of Less than 5 nm
Shimizu, Ken, Hiramoto, ToshiroVolume:
49
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.49.041302
Date:
April, 2010
File:
PDF, 298 KB
english, 2010