Observation of N-Shaped Negative Differential Resistance in GaAs-Based Modulation-Doped Field Effect Transistor with InAs Quantum Dots
Li, Yueqiang, Wang, Xiaodong, Xu, Xiaona, Liu, Wen, Chen, Yanling, Yang, Fuhua, Tan, Pingheng, Zeng, YipingVolume:
49
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.49.104002
Date:
October, 2010
File:
PDF, 989 KB
english, 2010