Activation of As Atoms in Ultrashallow Junction during...

Activation of As Atoms in Ultrashallow Junction during Milli- and Microsecond Annealing Induced by Thermal-Plasma-Jet Irradiation

Matsumoto, Kazuya, Ohta, Akio, Miyazaki, Seiichi, Higashi, Seiichiro
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Volume:
50
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.50.04da07
Date:
April, 2011
File:
PDF, 508 KB
english, 2011
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