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Electron Mobility Limited by Remote Charge Scattering in Thin (100)- and (110)-Oriented Silicon Body Double-Gated Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$ Gate Dielectrics
Iijima, Ryosuke, Edge, Lisa F., Paruchuri, Vamsi, Takayanagi, MarikoVolume:
51
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.51.044102
Date:
March, 2012
File:
PDF, 841 KB
english, 2012