In-situXPS study of ALD ZnO passivation of p-In0.53Ga0.47As

Electronic Materials Letters 2015 / 9 Vol. 11; Iss. 5

In-situXPS study of ALD ZnO passivation of p-In0.53Ga0.47As

Lucero, Antonio T., Byun, Young-Chul, Qin, Xiaoye, Cheng, Lanxia, Kim, Hyoungsub, Wallace, Robert M., Kim, Jiyoung
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Volume:
11
Language:
english
Journal:
Electronic Materials Letters
DOI:
10.1007/s13391-015-5150-6
Date:
September, 2015
File:
PDF, 853 KB
english, 2015
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