Comparison between Concentration Profiles of Arsenic Implanted in Silicon Measured by Means of Neutron Activation Analysis and Radioactive Ion Implantation
Iwaki, Masaya, Gamo, Kenji, Masuda, Kohzoh, Namba, Susumu, Ishihara, Shinji, Kimura, Itsuro, Yokota, KatsuhiroVolume:
14
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.14.167
Date:
January, 1975
File:
PDF, 208 KB
1975