MOS Gate Etching Using an Advanced Magnetron Etching System

Japanese Journal of Applied Physics 1989 / 11 Vol. 28; Iss. Part 1, No

MOS Gate Etching Using an Advanced Magnetron Etching System

Noda, Shuichi, Nishikawa, Satoshi, Ohno, Seigo
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Volume:
28
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.28.2362
Date:
November, 1989
File:
PDF, 1.08 MB
1989
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