![](/img/cover-not-exists.png)
Vacancy-Type Defects in As + -Implanted SiO 2 (43 nm)/Si Proved with Slow Positrons
Uedono, Akira, Tanigawa, Shoichiro, Sugiura, Jun, Ogasawara, MakotoVolume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.1867
Date:
October, 1990
File:
PDF, 1018 KB
1990