Vacancy-Type Defects in As +...

Japanese Journal of Applied Physics 1990 / 10 Vol. 29; Iss. Part 1, No

Vacancy-Type Defects in As + -Implanted SiO 2 (43 nm)/Si Proved with Slow Positrons

Uedono, Akira, Tanigawa, Shoichiro, Sugiura, Jun, Ogasawara, Makoto
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Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.1867
Date:
October, 1990
File:
PDF, 1018 KB
1990
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