Crystal Growth during the Sintering of Ultrafine SiC...

Japanese Journal of Applied Physics 1990 / 11 Vol. 29; Iss. Part 1, No

Crystal Growth during the Sintering of Ultrafine SiC Powders Containing Much Free-Si

Ando, Yoshinori, Ohkohchi, Masato
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Volume:
29
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.2429
Date:
November, 1990
File:
PDF, 2.29 MB
1990
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