Properties and Mechanism of Si Selective Epitaxial Growth...

Japanese Journal of Applied Physics 1993 / 6 Vol. 32; Iss. Part 1, No

Properties and Mechanism of Si Selective Epitaxial Growth on Al 2 O 3 using Electron Beam Irradiation

Ishida, Makoto, Tomita, Takashi, Fujita, Masahiko, Nakamura, Tetsuro
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
32
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.32.2582
Date:
June, 1993
File:
PDF, 1.74 MB
1993
Conversion to is in progress
Conversion to is failed