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Properties and Mechanism of Si Selective Epitaxial Growth on Al 2 O 3 using Electron Beam Irradiation
Ishida, Makoto, Tomita, Takashi, Fujita, Masahiko, Nakamura, TetsuroVolume:
32
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.32.2582
Date:
June, 1993
File:
PDF, 1.74 MB
1993