Improvement of Bonded Silicon-on-Insulator using TCE-Grown...

Japanese Journal of Applied Physics 1993 / 6 Vol. 32; Iss. Part 1, No

Improvement of Bonded Silicon-on-Insulator using TCE-Grown Oxide as Buried SiO 2

Huang, Qing-An, Chen, Jun-Ning, Zhang, Hui-Zhen, Tong, Qin-Yi
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Volume:
32
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.32.2854
Date:
June, 1993
File:
PDF, 302 KB
1993
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