Reduction of Radiation-Induced Degradation in n-Channel...

Japanese Journal of Applied Physics 1994 / 7 Vol. 33; Iss. Part 2, No

Reduction of Radiation-Induced Degradation in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET's) with Gate Oxides Prepared by Repeated Rapid Thermal $\bf N_{2}O$ Annealing

Wu, You-Lin, Kuo, Kang-Min, Hwu, Jenn-Gwo
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Volume:
33
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.33.L916
Date:
July, 1994
File:
PDF, 350 KB
1994
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