Improved Emitter-Base Junction with $\bf In_{2}O_{3}$ in...

Japanese Journal of Applied Physics 1995 / 12 Vol. 34; Iss. Part 1, No

Improved Emitter-Base Junction with $\bf In_{2}O_{3}$ in Dielectric-Base Transistor

Hato, Tsunehiro, Takauchi, Hideki, Yoshida, Akira, Tamura, Hirotaka, Fujimaki, Norio, Oshima, Yoshifumi, NaokiYokoyama,
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Volume:
34
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.34.6379
Date:
December, 1995
File:
PDF, 731 KB
1995
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