Electrical Characterization of Al/SiN x...

Japanese Journal of Applied Physics 2001 / 7 Vol. 40; Iss. Part 1, No

Electrical Characterization of Al/SiN x :H/n and p-In 0.53 Ga 0.47 As Structures by Deep-Level Transient Spectroscopy and Conductance Transient Techniques

Castán, Helena, Dueñas, Salvador, Barbolla, Juan, Blanco, Nieves, Mártil, Ignacio, González-Díaz, German
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Volume:
40
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.40.4479
Date:
July, 2001
File:
PDF, 280 KB
english, 2001
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