In Situ Growth of Isotopically Enriched 28Si Nanowires...

Japanese Journal of Applied Physics 2002 / 1 Vol. 41; Iss. Part 2, No

In Situ Growth of Isotopically Enriched 28Si Nanowires Using the Floating-Zone (FZ) Melting Method

Hu, Quanli, Li, Guoqing, Suzuki, Hiroshi, Araki, Hiroshi, Noda, Tetsuji
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Volume:
41
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.41.L7
Date:
January, 2002
File:
PDF, 1.49 MB
english, 2002
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