1.2 nm HfSiON/SiON Stacked Gate Insulators for 65-nm-Node MISFETs
Saitoh, Motofumi, Terai, Masayuki, Ikarashi, Nobuyuki, Watanabe, Heiji, Fujieda, Shinji, Iwamoto, Toshiyuki, Ogura, Takashi, Morioka, Ayuka, Watanabe, Koji, Tatsumi, Toru, Watanabe, HirohitoVolume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.44.2330
Date:
April, 2005
File:
PDF, 200 KB
english, 2005