![](/img/cover-not-exists.png)
Excess Carrier Lifetime Measurement of Bulk SiC Wafers and Its Relationship with Structural Defect Distribution
Mori, Tatsuhiro, Kato, Masashi, Watanabe, Hideki, Ichimura, Masaya, Arai, Eisuke, Sumie, Shingo, Hashizume, HidehisaVolume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.44.8333
Date:
December, 2005
File:
PDF, 525 KB
english, 2005