Strained Silicon–Germanium-on-Insulator n-Channel...

Strained Silicon–Germanium-on-Insulator n-Channel Transistor with Silicon Source and Drain Regions for Performance Enhancement

Wang, Grace Huiqi, Toh, Eng-Huat, Tung, Chih-Hang, Du, Anyan, Lo, Guo-Qiang, Samudra, Ganesh, Yeo, Yee-Chia
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Volume:
46
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.46.2062
Date:
April, 2007
File:
PDF, 378 KB
english, 2007
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