InAs-Channel High-Electron-Mobility Transistors for...

Japanese Journal of Applied Physics 2009 / 4 Vol. 48; Iss. 4

InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications

Chang, Chia-Yuan, Hsu, Heng-Tung, Chang, Edward Yi, Miyamoto, Yasuyuki
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Volume:
48
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.48.04C094
Date:
April, 2009
File:
PDF, 264 KB
english, 2009
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