Growth and Characterization of Highly Tensile-Strained Ge...

Japanese Journal of Applied Physics 2009 / 11 Vol. 48; Iss. 11

Growth and Characterization of Highly Tensile-Strained Ge on In x Ga 1- x As Virtual Substrate by Solid Source Molecular Beam Epitaxy

Hoshina, Yutaka, Yamada, Akira, Konagai, Makoto
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Volume:
48
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.48.111102
Date:
November, 2009
File:
PDF, 349 KB
english, 2009
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