[IEEE 2015 10th Spanish Conference on Electron Devices (CDE) - Aranjuez - Madrid, Spain (2015.2.11-2015.2.13)] 2015 10th Spanish Conference on Electron Devices (CDE) - Influence of systematic gate alignment variations on static characteristics in DG-SB-MOSFETs
Iglesias, Jose M., Martin, Maria J., Pascual, Elena, Rengel, RaulYear:
2015
Language:
english
DOI:
10.1109/CDE.2015.7087481
File:
PDF, 703 KB
english, 2015