High-mobility and low-operating voltage organic thin film transistor with epoxy based siloxane binder as the gate dielectric
Tewari, Amit, Gandla, Srinivas, Pininti, Anil Reddy, Karuppasamy, K., Böhm, Siva, Bhattacharyya, Arup R., McNeill, Christopher R., Gupta, DiptiVolume:
107
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4930305
Date:
September, 2015
File:
PDF, 1.34 MB
english, 2015