Modification of new photoelectric material GaN by...

Surface and Coatings Technology 2002 Vol. 158-159; Iss. none

Modification of new photoelectric material GaN by implantation of H+, He+ and N+ ion beam

Yao Shude, Zhou Shengqiang, Jiao Shengxian, Meng Zhaoxiang, Lu Yihong, Sun Changchun, Sun Chang, A. Vantomme, G. Langouche, B. Pipeleers, Q. Zhao
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Volume:
158-159
Year:
2002
Language:
english
Pages:
4
DOI:
10.1016/s0257-8972(02)00263-3
File:
PDF, 211 KB
english, 2002
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