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Exact Characterization of Threshold Voltage Instability in 4H-SiC MOSFETs by Non-Relaxation Method
Sometani, Mitsuru, Okamoto, Dai, Harada, Shinsuke, Ishimori, Hitoshi, Takasu, Shinji, Hatakeyama, Tetsuo, Takei, Manabu, Yonezawa, Yoshiyuki, Fukuda, Kenji, Okumura, HajimeVolume:
821-823
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.821-823.685
Date:
June, 2015
File:
PDF, 359 KB
english, 2015