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Channel Mobility Improvement in 4H-SiC MOSFETs Using a Combination of Surface Counter-Doping and NO Annealing
Ahyi, Ayayi Claude, Modic, Aaron, Jiao, C., Zheng, Y., Liu, Gang, Feldman, L.C., Dhar, SaritVolume:
821-823
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.821-823.693
Date:
June, 2015
File:
PDF, 386 KB
english, 2015