Gate Oxide Reliability of 4H-SiC V-Groove Trench MOSFET...

Materials Science Forum 2015 / 6 Vol. 821-823

Gate Oxide Reliability of 4H-SiC V-Groove Trench MOSFET with Thick Bottom Oxide

Hiyoshi, Toru, Masuda, Takeyoshi, Saitoh, Yu, Wada, Keiji, Tsuno, Takashi, Mikamura, Yasuki
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Volume:
821-823
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.821-823.741
Date:
June, 2015
File:
PDF, 1.07 MB
english, 2015
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