Improvement of Current Gain and Breakdown Voltage in 4H-SiC BJTs Employing High-k Dielectric as an Interfacial Layer
Yuan, Lei, Zhang, Yu Ming, Song, Qing Wen, Tang, Xiao Yan, Zhang, Yi MenVolume:
821-823
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.821-823.818
Date:
June, 2015
File:
PDF, 400 KB
english, 2015