4.5-kV 20-mΩ.cm2 Implantation-Free 4H-SiC BJT with Trench...

Materials Science Forum 2015 / 6 Vol. 821-823

4.5-kV 20-mΩ.cm2 Implantation-Free 4H-SiC BJT with Trench Structures on the Junction Termination Extension

Elahipanah, Hossein, Salemi, Arash, Zetterling, Carl Mikael, Östling, Mikael
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Volume:
821-823
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.821-823.838
Date:
June, 2015
File:
PDF, 1.28 MB
english, 2015
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