Etching characteristics of Si and SiO2 with a low energy...

Etching characteristics of Si and SiO2 with a low energy argon/hydrogen d.c. plasma source

A Strass, W Hansch, P Bieringer, A Neubecker, F Kaesen, A Fischer, I Eisele
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Volume:
97
Year:
1997
Language:
english
Pages:
5
DOI:
10.1016/s0257-8972(97)00144-8
File:
PDF, 212 KB
english, 1997
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