[IEEE 2015 IEEE 27th International Symposium on Power...

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[IEEE 2015 IEEE 27th International...

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Electro-thermal simulation of 1200 V 4H-SiC MOSFET short-circuit SOA†

Duong, T. H., Ortiz, J. M., Berning, D. W., Hefner, A. R., Ryu, S.-H., Palmour, J. W.

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Year:

2015

Language:

english

DOI:

10.1109/ISPSD.2015.7123428

File:

PDF, 810 KB

english, 2015

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[IEEE 2015 IEEE 27th International Symposium on Power...

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Electro-thermal simulation of 1200 V 4H-SiC MOSFET short-circuit SOA&#x2020;

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Electro-thermal simulation of 1200 V 4H-SiC MOSFET short-circuit SOA†