Deducing the apparent flat-band position Vafb and the doping level of large area single layer graphene MOS capacitors
Lin, H.C.D., Asselberghs, I., Vais, A., Arutchelvan, G., Delabie, A., Heyns, M., Mocuta, A., Radu, I., Thean, A.Volume:
147
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2015.04.104
Date:
November, 2015
File:
PDF, 1.26 MB
english, 2015