![](/img/cover-not-exists.png)
First-principles investigations for oxidation reaction processes at 4H-SiC/SiO2 interface and its orientation dependence
Akiyama, Toru, Ito, Ayako, Nakamura, Kohji, Ito, Tomonori, Kageshima, Hiroyuki, Uematsu, Masashi, Shiraishi, KenjiVolume:
641
Language:
english
Journal:
Surface Science
DOI:
10.1016/j.susc.2015.06.028
Date:
November, 2015
File:
PDF, 1.70 MB
english, 2015