![](/img/cover-not-exists.png)
[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Modeling spatial and energy oxide trap distribution responsible for NBTI in p-channel power U-MOSFETs
Tallarico, Andrea N., Sangiorgi, Enrico, Fiegna, Claudio, Magnone, Paolo, Barletta, Giacomo, Magri, AngeloYear:
2015
Language:
english
DOI:
10.1109/ISPSD.2015.7123412
File:
PDF, 236 KB
english, 2015