[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - The effect of the collector contact design on the performance and yield of 800V Lateral IGBTs for power ICs
Camuso, G., Udrea, F., Udugampola, N., Pathirana, V., Trajkovic, T., Udrea, F.Year:
2015
Language:
english
DOI:
10.1109/ISPSD.2015.7123419
File:
PDF, 919 KB
english, 2015