[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Area- and efficiency-optimized junction termination for a 5.6 kV SiC BJT process with low ON-resistance
Salemi, Arash, Elahipanah, Hossein, Malm, Gunnar, Zetterling, Carl-Mikael, Ostling, MikaelYear:
2015
Language:
english
DOI:
10.1109/ISPSD.2015.7123436
File:
PDF, 511 KB
english, 2015