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[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Impact of the backside potential on the current collapse of GaN SBDs and HEMTs
Croon, J. A., Hurkx, G. A. M., Donkers, J. J. T. M., Sonsky, J.Year:
2015
Language:
english
DOI:
10.1109/ISPSD.2015.7123465
File:
PDF, 284 KB
english, 2015