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[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - An advanced p-channel LDMOS FET with HTRB tolerability of high-voltage pulse transmitter ICs for ultrasound applications
Miyoshi, Tomoyuki, Wada, Shinichiro, Shinomiya, Toshio, Ueno, SatoshiYear:
2015
Language:
english
DOI:
10.1109/ISPSD.2015.7123472
File:
PDF, 466 KB
english, 2015