![](/img/cover-not-exists.png)
AlGaN∕GaN HEMTs on silicon substrates with fT of 32∕20 GHz and fmax of 27∕22 GHz for 0.5∕0.7 m gate length
Javorka, P., Alam, A., Fox, A., Marso, M., Heuken, M., Kordoš, P.Volume:
38
Year:
2002
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:20020203
File:
PDF, 257 KB
english, 2002