Impact of two-step-recessed gate structure on RF...

Electronics Letters 1998 Vol. 34; Iss. 2

Impact of two-step-recessed gate structure on RF performance of InP-based HEMTs

Suemitsu, T., Enoki, T., Yokoyama, H., Umeda, Y., Ishii, Y.
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Volume:
34
Year:
1998
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:19980166
File:
PDF, 492 KB
english, 1998
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