[IEEE 2015 IEEE International Solid- State Circuits Conference - (ISSCC) - San Francisco, CA, USA (2015.2.22-2015.2.26)] 2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers - 17.2 A 64kb 16nm asynchronous disturb current free 2-port SRAM with PMOS pass-gates for FinFET technologies
Fujiwara, Hidehiro, Wang, Li-Wen, Chen, Yen-Huei, Lin, Kao-Cheng, Sun, Dar, Wu, Shin-Rung, Liaw, Jhon-Jhy, Lin, Chih-Yung, Chiang, Mu-Chi, Liao, Hung-Jen, Wu, Shien-Yang, Chang, JonathanYear:
2015
Language:
english
DOI:
10.1109/ISSCC.2015.7063051
File:
PDF, 359 KB
english, 2015